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Silicon CMOS architecture for a spin-based quantum computer
M. Veldhorst, H. G. J. Eenink, C. H. Yang, A. S. Dzurak
TL;DR
Large-scale quantum computing requires scalable qubit control alongside quantum error correction, but the classical-quantum interface remains underdeveloped. This paper proposes a CMOS-compatible silicon architecture using transistor control, exchange-coupled quantum-dot spins, ESR control, and dispersive readout, with surface-code operation and estimated unit-cell dissipation of approximately 50 nW. The architecture is intended to scale from 480-qubit modules toward thousands or millions of qubits, subject to continued CMOS improvements and manufacturing challenges.
Problem
The classical-quantum interface for scaling quantum computers to very large qubit numbers remains underdeveloped despite progress in QEC and high-fidelity qubits.
Method
The paper proposes a CMOS-compatible silicon architecture integrating transistor control, floating-gate tuning, exchange-coupled quantum-dot spins, ESR control, and gate-based dispersive readout.
Results
The architecture supports surface-code operations, scales through 480-qubit modules, and has an estimated dynamic dissipation of approximately 50 nW per surface-code unit cell.
Takeaways & Limitations
The design provides a proposed route toward silicon quantum processors containing thousands to millions of qubits using scalable control lines and global qubit control.
Takeaways & Limitations
The architecture requires multiple transistors per qubit, significantly challenging CMOS manufacturing capabilities and continued device down-scaling.
Abstract
from arXiv · showhide
Recent advances in quantum error correction (QEC) codes for fault-tolerant quantum computing \cite{Terhal2015} and physical realizations of high-fidelity qubits in a broad range of platforms \cite{Kok2007, Brown2011, Barends2014, Waldherr2014, Dolde2014, Muhonen2014, Veldhorst2014} give promise for the construction of a quantum computer based on millions of interacting qubits. However, the classical-quantum interface remains a nascent field of exploration. Here, we propose an architecture for a silicon-based quantum computer processor based entirely on complementary metal-oxide-semiconductor (CMOS) technology, which is the basis for all modern processor chips. We show how a transistor-based control circuit together with charge-storage electrodes can be used to operate a dense and scalable two-dimensional qubit system. The qubits are defined by the spin states of a single electron confined in a quantum dot, coupled via exchange interactions, controlled using a microwave cavity, and measured via gate-based dispersive readout \cite{Colless2013}. This system, based entirely on available technology and existing components, is compatible with general surface code quantum error correction \cite{Terhal2015}, enabling large-scale universal quantum computation.
I. PHYSICAL ARCHITECTURE
The proposed physical architecture vertically integrates a silicon-28 quantum layer with CMOS transistors and scalable interconnections. A 480-qubit module provides the repeating unit for larger processors, although further CMOS down-scaling remains necessary.
- I. PHYSICAL ARCHITECTURE: An SOI wafer places the isotopically enriched silicon-28 2D qubit array beneath a transistor layer, interconnected through polysilicon vias.
- I. PHYSICAL ARCHITECTURE: At a 7nm feature size, the minimum qubit size is approximately 63 nm × 63 nm, consistent with experimental silicon quantum dot qubits.
- I. PHYSICAL ARCHITECTURE: Fabricating the assumed classical devices requires continued advances in semiconductor down-scaling.
- I. PHYSICAL ARCHITECTURE: The control architecture uses vertically stacked interconnection layers to reconcile the different geometries of classical and quantum circuits.
- I. PHYSICAL ARCHITECTURE: A 480-qubit module forms the point beyond which scaling becomes straightforward replication of the same structure.
II. ELECTRICAL OPERATION
The electrical design loads and calibrates single-electron spin qubits in quantum dots, using floating gates, exchange coupling, and globally broadcast control for surface-code operation.
- II. ELECTRICAL OPERATION: Each quantum dot receives one electron through word- and bit-line addressing, while gate-based dispersive readout verifies occupancy.
- II. ELECTRICAL OPERATION: The complete structure operates at approximately 1 K or below inside an ESR cavity that applies qubit-control pulses.
- II. ELECTRICAL OPERATION: Floating memory gates tune each qubit's resonance frequency through electrical g-factor control, with six resonance frequencies required for the surface code.
- II. ELECTRICAL OPERATION: Q-gates are calibrated so adjacent exchange is negligible when J-gates are off and common when J-gates are on.
- II. ELECTRICAL OPERATION: Global parallel control is treated as crucial for large-scale operation.
II.a. Gate-based dispersive readout and initialization
The architecture proposes Pauli spin blockade with gate-based dispersive readout for parity measurements between single-spin qubits. Row-wise frequency-multiplexed readout is designed to operate within silicon-spin coherence times.
- II.a. Gate-based dispersive readout and initialization: Pauli spin blockade is selected for parity readout because it offers a larger energy scale, avoids a large reservoir, and permits low-frequency operation.
- II.a. Gate-based dispersive readout and initialization: A reference neighbour dot projects single-spin states into singlet-triplet states, enabling parity measurement between two qubits.
- II.a. Gate-based dispersive readout and initialization: Readout detects state-dependent capacitance through reflected power in an RF circuit connected to a nearby gate.
- II.a. Gate-based dispersive readout and initialization: Readout is performed row by row, with frequency multiplexing allowing an entire row to use one RF analyzer circuit.
- II.a. Gate-based dispersive readout and initialization: At 1 GHz, readout takes approximately 10–100 ns, enabling array readout within the 28ms coherence time reported for 28Si substrates.
II.b. Surface code operations
The proposed spin-qubit surface code uses six-qubit unit cells and an addressing protocol compatible with individual, row-wise, and global operations. The work focuses on realizing the array rather than calculating implementation-specific error thresholds.
- II.b. Surface code operations: Two measurement qubits enable parity readout, making this unit cell larger than the usual four-qubit surface-code cell.
- II.b. Surface code operations: The design does not provide a detailed analysis of error thresholds for its particular surface-code implementation.
- II.b. Surface code operations: Word, bit, and data lines support global control, row-wise coupling and readout, and individual qubit deselection within the 480-qubit module.
- II.b. Surface code operations: Each surface-code unit cell contains two data qubits and four measurement qubits, with separate resonance frequencies for each qubit class.
- II.b. Surface code operations: The surface-code cycle requires ten steps and adds a SWAP operation for qubit readout compared with standard surface-code operation.
III. HEAT DISSIPATION
The architecture estimates dynamic dissipation from J-gates and considers cooling constraints from stacked addressing lines. The estimated dissipation and thermal conductivity suggest operation above approximately 0.1 K is feasible.
- Power estimate: Dynamic power from a surface-code unit cell is modeled as P = CV^2αf, where capacitance, voltage, activity, and clock frequency determine dissipation.The estimate focuses on J-gates as likely the largest dissipation source.
- Power estimate: V = 0.2 V gives approximately 50 nW power dissipation for a single surface-code unit cell.The floating-gate thermal fluctuation scale is estimated as kBT/C ≈ 1 µV.
- Cooling constraints: Ten to twenty stacked metallic layers are estimated to keep total addressing-line thickness below 5 µm.Cooling power is ultimately limited by thermal conductivity in the upper addressing layers.
- Cooling constraints: Polysilicon thermal conductivity near zero Kelvin is estimated at κ = 100 W/m/K, with sufficient cooling power available above approximately 0.1 K.Lower operation voltage or single-electron-transistor operation could further reduce required cooling power.
IV. DISCUSSION
The proposed architecture combines scalable control lines, ESR control, exchange coupling, and dispersive readout for surface-code operation. It targets scaling from thousands to millions of qubits, while current CMOS fabrication remains a major constraint.
- Architecture and scalability: The architecture uses scalable control lines for single-electron spins in isotopically purified silicon and supports surface-code operations through ESR control, exchange coupling, and dispersive readout.The design is intended to scale to thousands or even millions of qubits.
- Architecture and scalability: Global qubit control could address many qubits within their coherence time.This is identified as a key advantage of the proposed design.
- Limitations: Multiple transistors per qubit significantly challenge current CMOS manufacturing capabilities.More uniform qubits could reduce tuning circuitry and floating gates, while low magnetic fields could remove the need for g-factor tuning but restrict single-qubit gates to global operation.
- Platform scope: The architecture is generic across several silicon spin-qubit platforms and qubit types, while requiring only local exchange interaction in the considered system.Potential platforms include Si/SiO2, Si/SiGe, single-spin, singlet-triplet, exchange-only, and hybrid qubits.
VI. AUTHOR CONTRIBUTIONS
The authors describe distinct contributions to floating-gate design, universal-computation compatibility, project supervision, and manuscript preparation.
- Contributions: M. V. and C.H.Y. designed floating gates addressed via vertical transistors above the qubit plane.
- Contributions: H.G.J.E. and M.V. made the design compatible with universal quantum computation.
- Contributions: A.S.D. initiated and supervised the project, while all authors contributed to writing the manuscript.
Supplementary Information CMOS archictecture for a 2D array of spin qubits
The supplementary architecture develops scalable CMOS control structures for two-dimensional quantum-dot arrays and maps them onto surface-code operation. It covers physical layout, qubit control, readout, and gate implementation.
- CMOS control layout: A single control structure has aspect ratio 4λ×20λ and is extended to match square qubit arrays and surface-code layouts.The resulting layouts address 20×4 and then 24×20 qubit arrays.
- CMOS control layout: The basic scalable unit consists of one qubit and two J-gates in a nearest-neighbour-coupled two-dimensional quantum-dot array.The control element uses transistor switches to activate lines, with feature size represented by λ.
- Array scaling: The architecture scales from the elementary control structure to 4×20 and 24×20 arrays containing 80 and 480 qubits.The 480-qubit array is organized to match Data, Word, and Bit lines for surface-code operation.
- Initialization and readout: Qubit initialization and readout use spin-to-charge conversion, with Pauli spin blockade offering higher readout fidelity and avoiding a large reservoir or magnetic field.Single spins can be projected onto singlet-triplet states using a neighbouring reference dot for parity measurement.
- Qubit operations: Single-qubit operations use six resonance frequencies with global cavity control and electrical individual tuning.The frequency groups correspond to Z, data, and X qubits in the surface-code structure.
- Qubit operations: Two-qubit gates arise from electrically controlled tunnel coupling or detuning, producing SWAP or CPHASE operations through interaction-dependent phases.Surface-code CNOT operations are implemented with CPHASE and single-qubit pulses, with reference qubits supporting readout.
- Surface-code operation: Surface-code cycles on the two-dimensional quantum-dot array combine CPHASE operations, Hadamard-like pulses, initialization, and readout.Additional z rotations from CPHASE operations are incorporated into the Hadamard-like operation.