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Kilovolt-class Vertical (011) \b{eta}-Ga2O3 Schottky Diodes for High Voltage and High Temperature Applications

Emerson J. Hollar, Aaron M. Adams, Nolan S. Hendricks, Andrew J. Green, Esmat Farzana

arXiv:2610.04388v1cond-mat.mtrl-scics.SYeess.SY

TL;DR

High-temperature performance of multi-kilovolt vertical β-Ga2O3 Schottky barrier diodes at high reverse bias remains under investigation. The study uses a high-permittivity TiO2/Al2O3 field-plate, with underlying Al2O3 reported to suppress leakage at the field-plate interface. The high-permittivity TiO2/Al2O3 dielectric field-plate enabled excellent ~4 kV performance.

  • Problem

    High-temperature performance of multi-kilovolt vertical β-Ga2O3 Schottky barrier diodes at high reverse bias remains under investigation.

    Source: p. 3

  • Method

    The study uses a high-permittivity TiO2/Al2O3 field-plate, with underlying Al2O3 reported to suppress leakage at the field-plate interface.

    Source: pp. 3, 10

  • Results

    The high-permittivity TiO2/Al2O3 dielectric field-plate enabled excellent ~4 kV performance.

    Source: p. 10

  • Takeaways & Limitations

    At elevated temperatures, near-unity ideality factor and reduced Schottky barrier height are consistent with ideal thermionic-emission expectations.

    Source: p. 7

    Without Fluorinert at high temperature, premature air breakdown can limit device performance.

    Source: p. 9

Abstract

from arXiv · show

We report kilovolt-class vertical (011) \b{eta}-Ga2O3 Schottky diodes utilizing high-permittivity dielectric TiO2/Al2O3 field-plate for high voltage and high temperature applications. A systematic study was performed with Pt/(011) \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) with varied diameters from 100 {\mu}m to 300 {\mu}m, for both with and without field-plate, that revealed excellent consistency of reverse blocking performance regardless of diode area. The field-plate SBDs achieved superior breakdown voltages (3.90 - 4.16 kV) compared to the diodes without field-plate (3.06 - 3.16 kV) owing to effective edge termination. Furthermore, we explored high-temperature performance of the field-plate (011) \b{eta}-Ga2O3 diodes that revealed excellent forward conduction properties and high rectification ratio (~10^9) throughout the temperature range (25 - 150 C). At reverse bias, the field-plate diodes also exhibited kV-range breakdown voltage with no evident increase in leakage current up to the explored elevated temperature of 150 C. The low area-dependence of breakdown voltage, excellent forward transport properties, and minimal reverse leakage at both high-voltage and elevated temperature demonstrate the exciting potential of (011) \b{eta}-Ga2O3 SBDs in high-temperature power switches. Thus, our work demonstrates the strategy of advancing the performance of vertical \b{eta}-Ga2O3 SBDs by utilizing the advantageous (011) \b{eta}-Ga2O3 epilayers with low background doping, reduced killer dislocation effects, and effective field management for high-voltage and high-temperature applications.

Author Declarations

The authors report no conflicts of interest.

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